Tunable trench gate power MOSFET: A feasible superjunction device and process technology

Xin Yang, Yung C. Liang, Ganesh S. Samudra, Yong Liu

Research output: Contribution to conferencePaper

6 Citations (Scopus)
Original languageEnglish
Pages729-733
Number of pages5
Publication statusPublished - Nov 2004
Event30th Annual Conference of IEEE Industrial Electronics Society (IECON 2004) - , Korea, Republic of
Duration: 01 Nov 200401 Nov 2004

Conference

Conference30th Annual Conference of IEEE Industrial Electronics Society (IECON 2004)
CountryKorea, Republic of
Period01/11/200401/11/2004

Cite this

Yang, X., Liang, Y. C., Samudra, G. S., & Liu, Y. (2004). Tunable trench gate power MOSFET: A feasible superjunction device and process technology. 729-733. Paper presented at 30th Annual Conference of IEEE Industrial Electronics Society (IECON 2004), Korea, Republic of.