Tunable trench gate power MOSFET: A feasible superjunction device and process technology

Xin Yang, Yung C. Liang, Ganesh S. Samudra, Yong Liu

Research output: Contribution to conference › Paper

Original language	English
Pages	729-733
Number of pages	5
Publication status	Published - Nov 2004
Event	30th Annual Conference of IEEE Industrial Electronics Society (IECON 2004) - , Korea, Republic of Duration: 01 Nov 2004 → 01 Nov 2004

Conference	30th Annual Conference of IEEE Industrial Electronics Society (IECON 2004)
Country/Territory	Korea, Republic of
Period	01/11/2004 → 01/11/2004

Cite this

@conference{2951fcbbd3da492c948e51b40923e1b0,

title = "Tunable trench gate power MOSFET: A feasible superjunction device and process technology",

author = "Xin Yang and Liang, {Yung C.} and Samudra, {Ganesh S.} and Yong Liu",

year = "2004",

month = nov,

language = "English",

pages = "729--733",

note = "30th Annual Conference of IEEE Industrial Electronics Society (IECON 2004) ; Conference date: 01-11-2004 Through 01-11-2004",

}

TY - CONF

T1 - Tunable trench gate power MOSFET: A feasible superjunction device and process technology

AU - Yang, Xin

AU - Liang, Yung C.

AU - Samudra, Ganesh S.

AU - Liu, Yong

PY - 2004/11

Y1 - 2004/11

UR - http://www.scopus.com/inward/record.url?scp=20544461904&partnerID=8YFLogxK

M3 - Paper

SP - 729

EP - 733

T2 - 30th Annual Conference of IEEE Industrial Electronics Society (IECON 2004)

Y2 - 1 November 2004 through 1 November 2004

ER -