Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

Gopalan Srinivasan; Michael Bain; Sekhar Bhattacharya; Paul Baine; Mervyn Armstrong; Harold Gamble; David McNeill

doi:10.1016/j.mseb.2004.07.019

Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

Gopalan Srinivasan, Michael Bain, Sekhar Bhattacharya, Paul Baine, Mervyn Armstrong, Harold Gamble, David McNeill

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Novel CVD WSi2 technology with low series and contact resistance in SiGe HBTs was achieved. Specific contact resistance to Si1-xGex with 0

Original language	English
Pages (from-to)	223-227
Number of pages	5
Journal	Materials Science and Engineering B
Volume	114-115
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mseb.2004.07.019
Publication status	Published - Dec 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Science(all)
Condensed Matter Physics

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10.1016/j.mseb.2004.07.019

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@article{26a628af7b1b431ea3b6f5ab09d45811,

title = "Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys",

abstract = "Novel CVD WSi2 technology with low series and contact resistance in SiGe HBTs was achieved. Specific contact resistance to Si1-xGex with 0",

author = "Gopalan Srinivasan and Michael Bain and Sekhar Bhattacharya and Paul Baine and Mervyn Armstrong and Harold Gamble and David McNeill",

year = "2004",

month = dec,

doi = "10.1016/j.mseb.2004.07.019",

language = "English",

volume = "114-115",

pages = "223--227",

journal = "Materials Science and Engineering B",

issn = "0921-5107",

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T1 - Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

AU - Srinivasan, Gopalan

AU - Bain, Michael

AU - Bhattacharya, Sekhar

AU - Baine, Paul

AU - Armstrong, Mervyn

AU - Gamble, Harold

AU - McNeill, David

PY - 2004/12

Y1 - 2004/12

N2 - Novel CVD WSi2 technology with low series and contact resistance in SiGe HBTs was achieved. Specific contact resistance to Si1-xGex with 0

AB - Novel CVD WSi2 technology with low series and contact resistance in SiGe HBTs was achieved. Specific contact resistance to Si1-xGex with 0

UR - http://www.scopus.com/inward/record.url?scp=10644279940&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2004.07.019

DO - 10.1016/j.mseb.2004.07.019

M3 - Article

VL - 114-115

SP - 223

EP - 227

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

SN - 0921-5107

IS - SPEC. ISS.

ER -

Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

Abstract

ASJC Scopus subject areas

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