Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

Gopalan Srinivasan, Michael Bain, Sekhar Bhattacharya, Paul Baine, Mervyn Armstrong, Harold Gamble, David McNeill

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Novel CVD WSi2 technology with low series and contact resistance in SiGe HBTs was achieved. Specific contact resistance to Si1-xGex with 0
LanguageEnglish
Pages223-227
Number of pages5
JournalMaterials Science and Engineering B
Volume114-115
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - Dec 2004

Fingerprint

germanium alloys
silicon alloys
Tungsten
Contact resistance
contact resistance
Polysilicon
tungsten
Heterojunction bipolar transistors
silicon
Chemical vapor deposition
vapor deposition
Si-Ge alloys

Cite this

Srinivasan, Gopalan ; Bain, Michael ; Bhattacharya, Sekhar ; Baine, Paul ; Armstrong, Mervyn ; Gamble, Harold ; McNeill, David. / Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys. In: Materials Science and Engineering B. 2004 ; Vol. 114-115, No. SPEC. ISS. pp. 223-227.
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Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys. / Srinivasan, Gopalan; Bain, Michael; Bhattacharya, Sekhar; Baine, Paul; Armstrong, Mervyn; Gamble, Harold; McNeill, David.

In: Materials Science and Engineering B, Vol. 114-115, No. SPEC. ISS., 12.2004, p. 223-227.

Research output: Contribution to journalArticle

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T1 - Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

AU - Srinivasan, Gopalan

AU - Bain, Michael

AU - Bhattacharya, Sekhar

AU - Baine, Paul

AU - Armstrong, Mervyn

AU - Gamble, Harold

AU - McNeill, David

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JO - Materials Science and Engineering B

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