Abstract
| Language | English |
|---|---|
| Pages | 223-227 |
| Number of pages | 5 |
| Journal | Materials Science and Engineering B |
| Volume | 114-115 |
| Issue number | SPEC. ISS. |
| DOIs | |
| Publication status | Published - Dec 2004 |
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Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys. / Srinivasan, Gopalan; Bain, Michael; Bhattacharya, Sekhar; Baine, Paul; Armstrong, Mervyn; Gamble, Harold; McNeill, David.
In: Materials Science and Engineering B, Vol. 114-115, No. SPEC. ISS., 12.2004, p. 223-227.Research output: Contribution to journal › Article
TY - JOUR
T1 - Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys
AU - Srinivasan, Gopalan
AU - Bain, Michael
AU - Bhattacharya, Sekhar
AU - Baine, Paul
AU - Armstrong, Mervyn
AU - Gamble, Harold
AU - McNeill, David
PY - 2004/12
Y1 - 2004/12
N2 - Novel CVD WSi2 technology with low series and contact resistance in SiGe HBTs was achieved. Specific contact resistance to Si1-xGex with 0
AB - Novel CVD WSi2 technology with low series and contact resistance in SiGe HBTs was achieved. Specific contact resistance to Si1-xGex with 0
UR - http://www.scopus.com/inward/record.url?scp=10644279940&partnerID=8YFLogxK
U2 - 10.1016/j.mseb.2004.07.019
DO - 10.1016/j.mseb.2004.07.019
M3 - Article
VL - 114-115
SP - 223
EP - 227
JO - Materials Science and Engineering B
T2 - Materials Science and Engineering B
JF - Materials Science and Engineering B
SN - 0921-5107
IS - SPEC. ISS.
ER -