Ultrafast low-loss 42-70 GHz differential SPDT switch in 0.35 μm SiGe technology

M. Thian, V.F. Fusco

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

This paper presents an ultrafast wideband low-loss single-pole double-throw (SPDT) differential switch in 0.35 µ m SiGe bipolar technology. The proposed topology adopting current-steering technique results in a total measured switching time of 75 ps , which suggests a maximum switching rate of 13 Gb/s, the fastest ever reported at V-band. In addition, the switch exhibits an insertion loss lower than 1.25 dB and an isolation higher than 18 dB from 42 GHz to 70 GHz.
Original languageEnglish
Article number06138887
Pages (from-to)655-659
Number of pages5
JournalIEEE Transactions on Microwave Theory and Techniques
Volume60
Issue number3
DOIs
Publication statusPublished - Mar 2012

Bibliographical note

Copyright 2012 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Radiation

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