Ultrafast low-loss 42-70 GHz differential SPDT switch in 0.35 μm SiGe technology

M. Thian; V.F. Fusco

doi:10.1109/TMTT.2011.2180395

Ultrafast low-loss 42-70 GHz differential SPDT switch in 0.35 μm SiGe technology

M. Thian, V.F. Fusco

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

This paper presents an ultrafast wideband low-loss single-pole double-throw (SPDT) differential switch in 0.35 µ m SiGe bipolar technology. The proposed topology adopting current-steering technique results in a total measured switching time of 75 ps , which suggests a maximum switching rate of 13 Gb/s, the fastest ever reported at V-band. In addition, the switch exhibits an insertion loss lower than 1.25 dB and an isolation higher than 18 dB from 42 GHz to 70 GHz.

Original language	English
Article number	06138887
Pages (from-to)	655-659
Number of pages	5
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	60
Issue number	3
DOIs	https://doi.org/10.1109/TMTT.2011.2180395
Publication status	Published - Mar 2012

Bibliographical note

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Radiation

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10.1109/TMTT.2011.2180395

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title = "Ultrafast low-loss 42-70 GHz differential SPDT switch in 0.35 μm SiGe technology",

abstract = "This paper presents an ultrafast wideband low-loss single-pole double-throw (SPDT) differential switch in 0.35 µ m SiGe bipolar technology. The proposed topology adopting current-steering technique results in a total measured switching time of 75 ps , which suggests a maximum switching rate of 13 Gb/s, the fastest ever reported at V-band. In addition, the switch exhibits an insertion loss lower than 1.25 dB and an isolation higher than 18 dB from 42 GHz to 70 GHz.",

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AB - This paper presents an ultrafast wideband low-loss single-pole double-throw (SPDT) differential switch in 0.35 µ m SiGe bipolar technology. The proposed topology adopting current-steering technique results in a total measured switching time of 75 ps , which suggests a maximum switching rate of 13 Gb/s, the fastest ever reported at V-band. In addition, the switch exhibits an insertion loss lower than 1.25 dB and an isolation higher than 18 dB from 42 GHz to 70 GHz.

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Ultrafast low-loss 42-70 GHz differential SPDT switch in 0.35 μm SiGe technology

Abstract

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