Abstract
This paper presents an ultrafast wideband low-loss single-pole double-throw (SPDT) differential switch in 0.35 µ m SiGe bipolar technology. The proposed topology adopting current-steering technique results in a total measured switching time of 75 ps , which suggests a maximum switching rate of 13 Gb/s, the fastest ever reported at V-band. In addition, the switch exhibits an insertion loss lower than 1.25 dB and an isolation higher than 18 dB from 42 GHz to 70 GHz.
Original language | English |
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Article number | 06138887 |
Pages (from-to) | 655-659 |
Number of pages | 5 |
Journal | IEEE Transactions on Microwave Theory and Techniques |
Volume | 60 |
Issue number | 3 |
DOIs | |
Publication status | Published - Mar 2012 |
Bibliographical note
Copyright 2012 Elsevier B.V., All rights reserved.ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Radiation