This paper presents an ultrafast wideband low-loss single-pole double-throw (SPDT) differential switch in 0.35 µ m SiGe bipolar technology. The proposed topology adopting current-steering technique results in a total measured switching time of 75 ps , which suggests a maximum switching rate of 13 Gb/s, the fastest ever reported at V-band. In addition, the switch exhibits an insertion loss lower than 1.25 dB and an isolation higher than 18 dB from 42 GHz to 70 GHz.
|Number of pages||5|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|Publication status||Published - Mar 2012|
Bibliographical noteCopyright 2012 Elsevier B.V., All rights reserved.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics