We report the engineering of air voids embedded in GaAs-based photonic crystal surface-emitting lasers realized by metalorganic vapor-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index planes is exploited in order to increase the void volume, leading to an order of magnitude reduction in threshold current and an increase in output power through an increase in the associated grating coupling strength.
|Journal||Applied Physics Letters|
|Publication status||Published - 11 Jan 2021|
Bibliographical noteFunding Information:
This work was supported by the Engineering and Physical Sciences Research Council (Grant No. EP/S023321/1). A.F.M. is grateful for support from CST Global Ltd. through an Industrial Fellowship from the Royal Commission for the Exhibition of 1851.
© 2021 Author(s).
Copyright 2021 Elsevier B.V., All rights reserved.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Gallium Arsenide based photonic crystal surface emitting lasersAuthor: King, B., Dec 2021
Supervisor: Hogg, R. (External person) (Supervisor), Childs, D. (External person) (Supervisor) & Pollard, R. (Supervisor)
Student thesis: Doctoral Thesis › Doctor of Philosophy