Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design

A. F. McKenzie; B. C. King; K. J. Rae; S. Thoms; N. D. Gerrard; J. R. Orchard; K. Nishi; K. Takemasa; M. Sugawara; R. J.E. Taylor; D. T.D. Childs; D. A. Maclaren; R. A. Hogg

doi:10.1063/5.0035038

Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design

A. F. McKenzie, B. C. King, K. J. Rae, S. Thoms, N. D. Gerrard, J. R. Orchard, K. Nishi, K. Takemasa, M. Sugawara, R. J.E. Taylor, D. T.D. Childs, D. A. Maclaren, R. A. Hogg

School of Mathematics and Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report the engineering of air voids embedded in GaAs-based photonic crystal surface-emitting lasers realized by metalorganic vapor-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index planes is exploited in order to increase the void volume, leading to an order of magnitude reduction in threshold current and an increase in output power through an increase in the associated grating coupling strength.

Original language	English
Article number	021109
Journal	Applied Physics Letters
Volume	118
Issue number	2
DOIs	https://doi.org/10.1063/5.0035038
Publication status	Published - 11 Jan 2021

Bibliographical note

Funding Information:
This work was supported by the Engineering and Physical Sciences Research Council (Grant No. EP/S023321/1). A.F.M. is grateful for support from CST Global Ltd. through an Industrial Fellowship from the Royal Commission for the Exhibition of 1851.

Publisher Copyright:
© 2021 Author(s).

Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0035038Licence: Unspecified

Gallium Arsenide based photonic crystal surface emitting lasers
Author: King, B., Dec 2021
Supervisor: Hogg, R. (External person) (Supervisor), Childs, D. (External person) (Supervisor) & Pollard, R. (Supervisor)
Student thesis: Doctoral Thesis › Doctor of Philosophy

Cite this

McKenzie, A. F., King, B. C., Rae, K. J., Thoms, S., Gerrard, N. D., Orchard, J. R., Nishi, K., Takemasa, K., Sugawara, M., Taylor, R. J. E., Childs, D. T. D., Maclaren, D. A., & Hogg, R. A. (2021). Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design. Applied Physics Letters, 118(2), [021109]. https://doi.org/10.1063/5.0035038

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title = "Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design",

abstract = "We report the engineering of air voids embedded in GaAs-based photonic crystal surface-emitting lasers realized by metalorganic vapor-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index planes is exploited in order to increase the void volume, leading to an order of magnitude reduction in threshold current and an increase in output power through an increase in the associated grating coupling strength. ",

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note = "Funding Information: This work was supported by the Engineering and Physical Sciences Research Council (Grant No. EP/S023321/1). A.F.M. is grateful for support from CST Global Ltd. through an Industrial Fellowship from the Royal Commission for the Exhibition of 1851. Publisher Copyright: {\textcopyright} 2021 Author(s). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",

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AU - McKenzie, A. F.

AU - King, B. C.

AU - Rae, K. J.

AU - Thoms, S.

AU - Gerrard, N. D.

AU - Orchard, J. R.

AU - Nishi, K.

AU - Takemasa, K.

AU - Sugawara, M.

AU - Taylor, R. J.E.

AU - Childs, D. T.D.

AU - Maclaren, D. A.

AU - Hogg, R. A.

N1 - Funding Information: This work was supported by the Engineering and Physical Sciences Research Council (Grant No. EP/S023321/1). A.F.M. is grateful for support from CST Global Ltd. through an Industrial Fellowship from the Royal Commission for the Exhibition of 1851. Publisher Copyright: © 2021 Author(s). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/1/11

Y1 - 2021/1/11

N2 - We report the engineering of air voids embedded in GaAs-based photonic crystal surface-emitting lasers realized by metalorganic vapor-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index planes is exploited in order to increase the void volume, leading to an order of magnitude reduction in threshold current and an increase in output power through an increase in the associated grating coupling strength.

AB - We report the engineering of air voids embedded in GaAs-based photonic crystal surface-emitting lasers realized by metalorganic vapor-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index planes is exploited in order to increase the void volume, leading to an order of magnitude reduction in threshold current and an increase in output power through an increase in the associated grating coupling strength.

U2 - 10.1063/5.0035038

DO - 10.1063/5.0035038

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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ER -

Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design

Abstract

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ASJC Scopus subject areas

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Student theses

Gallium Arsenide based photonic crystal surface emitting lasers

Cite this