Waveguide-to-microstrip transition at G-band using elevated E-plane probe

Oberdan Donadio; Khaled Elgaid; Roger Appleby

doi:10.1049/el.2010.2926

Waveguide-to-microstrip transition at G-band using elevated E-plane probe

Oberdan Donadio, Khaled Elgaid, Roger Appleby

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Abstract

A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than 210dB between 150 and 200 GHz and S21 ¼ 2 4dB at centre band (180GHz) for two transitions in back-to-back configuration.

Original language	English
Pages (from-to)	115-116
Number of pages	2
Journal	Electronics Letters
Volume	47
Issue number	2
DOIs	https://doi.org/10.1049/el.2010.2926
Publication status	Published - 20 Jan 2011

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2010.2926

Waveguide-to-microstrip Transition at G-band using Elevated E plane probe
© 2011 IEEE. This paper is a postprint of a paper submitted to and accepted for publication in Electronics Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library.
Accepted author manuscript, 1.61 MB

Cite this

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title = "Waveguide-to-microstrip transition at G-band using elevated E-plane probe",

abstract = "A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than 210dB between 150 and 200 GHz and S21 ¼ 2 4dB at centre band (180GHz) for two transitions in back-to-back configuration.",

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AU - Donadio, Oberdan

AU - Elgaid, Khaled

AU - Appleby, Roger

PY - 2011/1/20

Y1 - 2011/1/20

N2 - A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than 210dB between 150 and 200 GHz and S21 ¼ 2 4dB at centre band (180GHz) for two transitions in back-to-back configuration.

AB - A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than 210dB between 150 and 200 GHz and S21 ¼ 2 4dB at centre band (180GHz) for two transitions in back-to-back configuration.

U2 - 10.1049/el.2010.2926

DO - 10.1049/el.2010.2926

M3 - Article

VL - 47

SP - 115

EP - 116

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 2

ER -

Waveguide-to-microstrip transition at G-band using elevated E-plane probe

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