Waveguide-to-microstrip transition at G-band using elevated E-plane probe

Oberdan Donadio, Khaled Elgaid, Roger Appleby

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Abstract

A rectangular waveguide-to-microstrip transition operating at G-band is presented. The E-plane probe, used in the transition, is fabricated on semi-insulating gallium arsenide (SI-GaAs) and it is elevated on the substrate. This configuration reduces interaction with semiconductor material. The elevated probe is suitable for direct integration with monolithic microwave integrated circuits. Measured results show S11 better than 210dB between 150 and 200 GHz and S21 ¼ 2 4dB at centre band (180GHz) for two transitions in back-to-back configuration.
Original languageEnglish
Pages (from-to)115-116
Number of pages2
JournalElectronics Letters
Volume47
Issue number2
DOIs
Publication statusPublished - 20 Jan 2011

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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