David McNeill

    David McNeill

    Senior Lecturer

    Phone: +44 (0)28 9097 4534

    For media contact email comms.office@qub.ac.uk
    or call +44(0)2890 973091.

    Scopus Citations 0

    1. Published

      Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

      Srinivasan, G., Bain, M., Bhattacharya, S., Baine, P., Armstrong, M., Gamble, H. & McNeill, D., Dec 2004, In : Materials Science and Engineering B. 114-115, SPEC. ISS., p. 223-227 5 p.

      Research output: Contribution to journalArticle

    2. Published

      Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes

      Bain, M., Jin, M., Loh, S., Armstrong, M., Gamble, H. & McNeill, D., Feb 2005, In : IEEE Electron Device Letters. 26, 2, p. 72-74 3 p.

      Research output: Contribution to journalArticle

    3. Published

      Comparison of induced stresses due to electroless versus sputtered copper interconnect technology

      McNally, P. J., Kanatharana, J., Toh, B. H. W., McNeill, D., Tuomi, T., Danilewsky, A. N., Knuuttila, L., Riikonen, J. & Toivonen, J., Nov 2004, In : Semiconductor Science and Technology. 19(11), 11, p. 1280-1284 5 p.

      Research output: Contribution to journalArticle

    4. Published

      Silicon-on-insulator substrates with buried tungsten silicide layer

      Gamble, H., Armstrong, M., Baine, P., Bain, M. & McNeill, D., Apr 2001, In : Solid State Electronics. 45(4), 4, p. 551-557 7 p.

      Research output: Contribution to journalArticle

    5. Published

      Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

      McNally, P. J., Kanatharana, J., Toh, B. H. W., McNeill, D., Danilewsky, A. N., Tuomi, T., Knuuttila, L., Riikonen, J., Toivonen, J. & Simon, R., 15 Dec 2004, In : Journal of Applied Physics. 96(12), 12, p. 7596-7602 7 p., 7., 7

      Research output: Contribution to journalArticle

    6. Published

      Investigation of copper layers deposited by CVD using Cu(I)hfac(TMVS) precursor

      Toh, B. H. W., McNeill, D. & Gamble, H., Jul 2005, In : Journal of Materials Science: Materials in Electronics. 16(7), 7, p. 437-443 7 p.

      Research output: Contribution to journalArticle

    7. Published

      Fabrication and characterisation of silicon on insulator substrates incorporating thermal vias

      Bain, M., Baine, P., McNeill, D., Srinivasan, G., Jankovic, N., McCartney, J., Moore, R. A., Armstrong, M. & Gamble, H., Apr 2005, p. 103-108. 6 p.

      Research output: Contribution to conferencePaper

    8. Published

      Manufacture processes for GPSOI substrates and their influence on cross-talk suppression

      Baine, P., Gamble, H., Armstrong, M., McNeill, D., Bain, M., Hamel, J. S. & Kraft, M., Apr 2003, p. 57-63. 7 p.

      Research output: Contribution to conferencePaper

    9. Published

      Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

      Wadsworth, H., Bhattacharya, S., McNeill, D., Ruddell, F., Armstrong, M., Gamble, H. & Denvir, D., Aug 2006, In : Materials Science in Semiconductor Processing. 9, 4-5 SPEC. ISS., p. 685-689 5 p.

      Research output: Contribution to journalArticle

    10. Published

      Germanium on Sapphire By Wafer Bonding

      Baine, P., Gamble, H., Armstrong, M., McNeill, D. & Mitchell, N., Jan 2008.

      Research output: Contribution to conferencePaper

    11. Published

      Germanium on Sapphire Substrates for System-on-a-Chip

      Armstrong, M., Gamble, H., Mitchell, N., McNeill, D., Ruddell, F., Montgomery, J., Baine, P., Low, Y. & Rainey, P., May 2008, p. 1-1. 1 p.

      Research output: Contribution to conferencePaper

    12. Published

      Conduit diffusion of dopants in tungsten silicide layers

      Armstrong, M., Gamble, H., Bain, M., Baine, P. & McNeill, D., Mar 2008, p. 65-70. 6 p.

      Research output: Contribution to conferencePaper

    13. Published

      Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

      McNeill, D., Bhattacharya, S., Wadsworth, H., Ruddell, F., Mitchell, N., Armstrong, M. & Gamble, H., Feb 2008, In : Journal of Materials Science: Materials in Electronics. 19, 2, p. 119-123 5 p.

      Research output: Contribution to journalArticle

    14. Published

      Germanium on Sapphire

      Armstrong, M., Baine, P., Gamble, H., McNeill, D., Mitchell, N., Rainey, P., Ruddell, F. & Wadsworth, H., Dec 2007, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    15. Published

      IC SUBSTRATE AND METHOD OF MANUFACTURE

      Armstrong, M., Gamble, H., McNeill, D. & Mitchell, N., Dec 2007, Patent No. Patent Application PCT/GB2007/002281

      Research output: Patent

    16. Published

      Integration of ultrathin SOI using ion split and etch back processes

      Armstrong, M., Baine, P., Gamble, H., McNeill, D. & Suder, S., Jan 2007, p. 19-20. 2 p.

      Research output: Contribution to conferencePaper

    17. Published

      Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration

      Armstrong, M., Baine, P., Gamble, H., McNeill, D. & Suder, S., Oct 2006, p. 531-537. 7 p.

      Research output: Contribution to conferencePaper

    18. Published

      Buried Dielectrics for GeOI

      Armstrong, M., Ruddell, F., Wadsworth, H., Gamble, H. & McNeill, D., Mar 2006, p. 43-44. 2 p.

      Research output: Contribution to conferencePaper

    19. Published

      Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

      Armstrong, M., Gamble, H., McNeill, D., Ruddell, F. & Wadsworth, H., May 2006, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    20. Published

      Cross-talk suppression in SOI substrates

      Armstrong, M., Bain, M., Baine, P., Gamble, H., McNeill, D. & Montgomery, J., Jan 2005, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    21. Published

      Silicon-on-Insulator Substrates with Buried Ground Planes (GPSOI)

      Armstrong, M., Bain, M., Baine, P., Gamble, H., McNeill, D. & Montgomery, J., Apr 2004, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    22. Published

      Electrical characterisation of SOI substrates incorporating WSix ground planes

      Armstrong, M., Bain, M., Baine, P., Gamble, H. & McNeill, D., Apr 2004, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    23. Published

      Manufacturing processes for WSi2-GPSOI substrates and their influence on cross-talk suppression and inductance

      Armstrong, M., Bain, M., Baine, P., Gamble, H. & McNeill, D., Sep 2003. 7 p.

      Research output: Contribution to conferencePaper

    24. Published

      Germanium on Sapphire By Wafer Bonding

      Baine, P., Gamble, H., Armstrong, M., McNeill, D., Mitchell, N., Low, Y. & Rainey, P., Dec 2008, In : Solid State Electronics. 52, 12, p. 1840-1844 5 p.

      Research output: Contribution to journalArticle

    25. Published

      Germanium on sapphire

      Gamble, H., Baine, P., Wadsworth, H., Low, Y., Rainey, P., Ruddell, F., Armstrong, M., McNeill, D. & Mitchell, N., Dec 2008, In : International Journal of High Speed Electronics and Systems. 18, 4, p. 805-814 10 p.

      Research output: Contribution to journalArticle

    26. Published

      Silicon-on-insulator substrates with buried ground, planes (GPSOI)

      Bain, M., Stefanos, S., Baine, P., Loh, S. H., Jin, L., Montgomery, J., Armstrong, M., Gamble, H., Hamel, J., McNeill, D., Kraft, A. & Kemhadjian, H., Apr 2005, p. 273-278. 6 p.

      Research output: Contribution to conferencePaper

    27. Published

      Silicon-on-insulator substrates with buried tungsten silicide layer

      Gamble, H., Armstrong, M., Baine, P., Bain, M. & McNeill, D., Oct 2001.

      Research output: Contribution to conferencePaper

    28. Published

      Manufacturing processes for WSi2-GPSOI substrates and their influence on cross-talk suppression and inductance

      Baine, P., Gamble, H., Armstrong, M., Bain, M., McNeill, D., Hamel, J., Stefanos, S. & Kraft, M., Apr 2003.

      Research output: Contribution to conferencePaper

    29. Published

      Germanium bonding to AI2O3

      Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y. & Bain, M., 2008, In : ECS Transactions. 16, 8, p. 407-414 8 p.

      Research output: Contribution to journalArticle

    30. Published

      Germanium on sapphire substrates for system-on-a-chip

      Gamble, H., Armstrong, M., Baine, P., Low, Y., McNeill, D., Mitchell, N., Montgomery, J. & Ruddell, F., Nov 2008, In : Materials Science in Semiconductor Processing. 11(5), 5, p. 195-198 4 p.

      Research output: Contribution to journalArticle

    31. Published

      Application of atmospheric plasma for low temperature wafer bonding

      Low, Y. W., Rainey, P., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 385-393 9 p.

      Research output: Contribution to journalArticle

    32. Published

      Hydrogen implantation in germanium

      Low, Y. W., Rainey, P., Hurley, R., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Apr 2010, In : ECS Transactions. 28(1), p. 375-383 9 p.

      Research output: Contribution to journalArticle

    33. Published

      Electrical characterization of ALD Al2O3 and HfO2 films on germanium

      Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., 2010, In : ECS Transactions. 28, 1, p. 201-207 7 p.

      Research output: Contribution to journalArticle

    34. Published

      Carrier mobility variations in self-aligned germanium MOS transistors

      Low, Y., Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Apr 2010, In : ECS Transactions. 28(1), p. 43-49 7 p.

      Research output: Contribution to journalArticle

    35. Published

      Comparison of Si1-yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition

      Ray, S. K., McNeill, D., Gay, D. L., Maiti, C. K., Armstrong, A., Armstrong, M. & Gamble, H., Feb 1997, In : Thin Solid Films. 294(1-2), p. 149-152 4 p.

      Research output: Contribution to journalArticle

    36. Published

      The effect of germane variation on microstructure in polycrystalline Si/SiGe thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy

      Campbell, P. A., Walmsley, D. G., Chong, R. L. F., Gay, D. L., Gamble, H. & McNeill, D., Mar 1998, In : Applied Physics A - Materials Science & Processing. 66(1-2), p. S1067-S1071 5 p.

      Research output: Contribution to journalArticle

    37. Published

      An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

      Len, V. S. C., Hurley, R., McCusker, N., McNeill, D., Armstrong, M. & Gamble, H., Jun 1999, In : Solid State Electronics. 43(6), p. 1045-1049 5 p.

      Research output: Contribution to journalArticle

    38. Published
    39. Published

      Surface electromigration of sputtered copper patterned using ion milling or chemical mechanical polishing

      Toh, B. W. H., McCusker, N. D., McNeill, D., Gamble, H. & Len, V. S. C., Jun 2001, In : Journal of Materials Science: Materials in Electronics. 12(4-6), 4-6, p. 307-312 6 p.

      Research output: Contribution to journalArticle

    40. Published

      Characterisation of copper inductors fabricated by dual damascene and electroplating techniques

      Toh, B. H. W., McNeill, D. & Gamble, H., Apr 2005, In : Journal of Materials Science: Materials in Electronics. 16(4), 4, p. 233-238 6 p.

      Research output: Contribution to journalArticle

    41. Published
    42. Published

      Epitaxial silicon growth by rapid thermal CVD

      McNeill, D., Liang, Y., Montgomery, J., Gamble, H. & Armstrong, M., Sep 1991, In : Journal De Physique Iv. 1(C2), p. 779-786 8 p.

      Research output: Contribution to journalArticle

    43. Published

      Growth of wide band gap polycrystalline semi-insulating polycrystalline silicon

      Sands, D., Brunson, K. M., Spink, D. M., Thomas, C. B., McNeill, D., McDonald, A. A., Jennings, S. & Rosser, P. J., Feb 1990, In : Journal of Vacuum Science & Technology B (microelectronics Processing & Phenomena). 8(1), p. 16-20 5 p.

      Research output: Contribution to journalArticle

    44. Published

      Germanium MOS transistors on sapphire and alumina platforms

      Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y., Low, Y. W. & Tantraviwat, D., Oct 2009, p. 59-60. 2 p.

      Research output: Contribution to conferencePaper

    45. Published

      Effect of nitridation on Al/HfO2/Ge MIS capacitors

      Kailath, B. J., Bhattacharya, S., DasGupta, A., DasGupta, N., McNeill, D. & Gamble, H., Dec 2007, p. 194-197. 4 p.

      Research output: Contribution to conferencePaper

    46. Published

      Optimisation of tungsten disilicide dopant diffusion conduits for SSOI applications

      Liao, S., Bain, M., Baine, P., McNeill, D., Armstrong, M. & Gamble, H., Jan 2009, p. 83-84. 2 p.

      Research output: Contribution to conferencePaper

    47. Published

      Low temperature processes for manufacture of germanium MOS transistors

      Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y., Low, Y. W. & Tantraviwat, D., Jan 2009, p. 143-144. 2 p.

      Research output: Contribution to conferencePaper

    48. Published

      BESOI using a silicon germanium etch stop

      Li, X., Gay, D. L., McNeill, D., Armstrong, M. & Gamble, H., Sep 1997, p. 313-320. 8 p.

      Research output: Contribution to conferencePaper

    49. Published

      Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications

      McNeill, D., Gay, D. L., Li, X., Armstrong, M. & Gamble, H., Apr 1998, p. 307-313. 7 p.

      Research output: Contribution to conferencePaper

    50. Published

      Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers

      Uppal, S., Gay, D. L., Armstrong, A., McNeill, D., Baine, P., Armstrong, M., Gamble, H. & Yallup, K., May 1999, p. 219-224. 6 p.

      Research output: Contribution to conferencePaper

    51. Published

      An evaluation of the effects of benzotriazole in NH4OH slurry for copper CMP

      Len, V. S. C., McNeill, D. & Gamble, H., Apr 2000, p. E7.4.1-E7.4.6. 6 p.

      Research output: Contribution to conferencePaper

    52. Published

      Ultra-thin BESOI fabrication techniques

      Bhattacharya, S., Suder, S., Baine, P., McNeill, D., Uppal, S., Armstrong, A., Armstrong, M. & Gamble, H., Dec 2000, p. 227-230. 4 p.

      Research output: Contribution to conferencePaper

    53. Published

      Characterisation of copper CVD films deposited using copper (I) hexafluoroacetylacetonate trimethylvinylsilane - effects of water vapour and post annealing

      Len, V. S. C., Toh, B. H. W., McNeill, D. & Gamble, H., Oct 2000, p. 243-246. 4 p.

      Research output: Contribution to conferencePaper

    54. Published

      A comparative study into surface electromigration of sputtered copper patterned using lift-off and CMP

      McCusker, N. D., Len, V. S. C., Toh, B. H. W., McNeill, D. & Gamble, H., Oct 2000, p. 93-96. 4 p.

      Research output: Contribution to conferencePaper

    55. Published

      Characterisation of copper CVD films deposited using a Cu(I)(hfac)TMVS precursor

      Toh, B. H. W., Len, V. S. C., McNeill, D. & Gamble, H., Dec 2000, p. 253-256. 4 p.

      Research output: Contribution to conferencePaper

    56. Published

      Fabrication of SOI substrates with buried tungsten silicide layer by smart-cut technique

      Suder, S., Hurley, R., Bain, M., Baine, P., McNeill, D., Armstrong, M. & Gamble, H., Sep 2001, p. 279-282. 4 p.

      Research output: Contribution to conferencePaper

    57. Published

      Effects of copper grain structure on electromigration behaviour

      Toh, B. H. W., McNeill, D. & Gamble, H., Sep 2001, p. 39-42. 4 p.

      Research output: Contribution to conferencePaper

    58. Published

      Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide

      Bera, L. K., Choi, W. K., McNeill, D., Ray, S. K., Chatterjee, S. & Maiti, C. K., Nov 2000, p. H5.14.1-H5.14.6. 6 p.

      Research output: Contribution to conferencePaper

    59. Published

      The application of limited reaction processing to the deposition of silicon carbide layers

      Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Sep 1990, p. 357-360. 4 p.

      Research output: Contribution to conferencePaper

    60. Published

      Rapid thermal processing of polysilicon emitter bipolar transistors in a combined CMOS/bipolar process

      Grant, L. A., McNeill, D. & Blomley, P. F., Sep 1987, p. 207-209. 3 p.

      Research output: Contribution to conferencePaper

    61. Published

      Raman mapping analysis of structural damage in ion implanted bevelled Ge samples with application in smart cut technology

      Wasyluk, J., Rainey, P., Perova, T. S., Hurley, R., Mitchell, N., McNeill, D., Gamble, H. & Armstrong, M., Aug 2010, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    62. Published

      Low temperature measurement of TFTs fabricated on germanium-on-sapphire substrates

      Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y., Low, Y. W. & Tantraviwat, D., Sep 2009, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    63. Published

      Electronic characterisation of Ge MOSTs measured at low temperature

      McNeill, D., Low, Y., Tantraviwat, D., Rainey, P., Baine, P., Mitchell, N., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    64. Published

      Hydrogen and helium implantation in germanium for layer transfer applications

      Rainey, P., Low, Y. W., Hurley, R., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Dec 2009, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    65. Published

      Electrical characterisation of ALD Al2O3 and HfO2 films on germanium

      Tantraviwat, D., Low, Y., Baine, P., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    66. Published

      Carrier mobility variations in self-aligned germanium MOS transistors

      Tantraviwat, D., Rainey, P., Baine, P., McNeill, D., Mitchell, N., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    67. Published

      Dopant transport in tungsten silicide layers for application in SOI technology

      Liao, S., Bain, M., Baine, P., Montgomery, J., McNeill, D., Armstrong, M. & Gamble, H., Dec 2009, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    68. Published

      The effect of atmospheric oxygen plasma on buried oxide layer for low temeprature wafer bonding

      Low, Y. W., Rainey, P., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Dec 2009, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    69. Published

      Circular geometry transistors fabricated on germanium-on-alumina bonded substrates

      Baine, P., Low, Y., Rainey, P., Gamble, H., Armstrong, M., Mitchell, N. & McNeill, D., Oct 2010, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    70. Published

      Atmospheric-pressure plasma activation for low temperature bonding

      Low, Y. W., Rainey, P., Baine, P., Montgomery, J., Mitchell, N., McNeill, D., Gamble, H. & Armstrong, M., Oct 2010, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    71. Published

      Surface activation treatment using atmospheric pressure plasma for low temeprature direct wafer bonding

      Low, Y. W., Gamble, H., Armstrong, M., Rainey, P., Baine, P., Montgomery, J., Mitchell, N. & McNeill, D., Jun 2010, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    72. Published

      Single crystal silicon on glass substrates

      Baine, P., Gay, D. L., Quinn, L. J., Lee, B., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., Apr 1997, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    73. Published

      Electromigration in copper interconnects

      McCusker, N., Len, V. S. C., McNeill, D., Armstrong, M. & Gamble, H., Jun 1998, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    74. Published

      Investigation of p-type contamination in thin SOI layers during fabrication

      Uppal, S., Gay, D. L., Armstrong, A., McNeill, D., Baine, P., Armstrong, M., Gamble, H. & Yallop, K., Apr 1999, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    75. Published

      The effects of deposition conditions on micro-structure in polycrystalline silicon-germanium thin films: fractal characterisation using scanning probe microscopy

      Campbell, P. A., Walmsley, D. G., Gay, D. L., Chong, R. L. F., Gamble, H. & McNeill, D., Dec 1996, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    76. Published

      Characterisation of copper inductors fabricated on low-k SOG dielectric layers and low resistivity silicon wafers by electroplating techniques

      Toh, B. H. W., Bien, D., McNeill, D. & Gamble, H., Sep 2004, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    77. Published

      Growth of multi-layer Si/Si1-xGex structures using rapid thermal chemical vapour deposition

      McNeill, D., Armstrong, M. & Gamble, H., Dec 1993, p. 187-192. 6 p.

      Research output: Contribution to conferencePaper

    78. Published

      Rapid thermal epitaxial growth for static induction thyristors

      Ye, L., McNeill, D., Montgomery, J., Raza, S. H., Armstrong, M. & Gamble, H., Sep 1991, p. O-025-O-029. 5 p.

      Research output: Contribution to conferencePaper

    79. Published

      Low temperature epitaxial silicon growth in a rapid thermal processor

      McNeill, D., Gamble, H. & Armstrong, M., May 1991, p. 235-240. 6 p.

      Research output: Contribution to conferencePaper

    80. Published

      Silicon carbide layers produced by rapid thermal CVD

      Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Oct 1990, p. 159-170. 12 p.

      Research output: Contribution to conferencePaper

    81. Published

      Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

      Rainey, P., Wasyluk, J., Perova, T., Hurley, R., Mitchell, N., McNeill, D., Gamble, H. & Armstrong, M., Feb 2011, In : Electrochemical and Solid-State Letters. 14(2), 2, p. H69-H72 4 p.

      Research output: Contribution to journalArticle

    82. Published

      Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs

      Gajula, D. R., McNeill, D., Baine, P., Fleming, P., Duffy, R. & Armstrong, B. M., May 2011, In : ECS Transactions. 35, 3, p. 521-527 7 p.

      Research output: Contribution to journalArticle

    83. Published

      (Invited) Germanium on Sapphire Technology

      Gamble, H., Baine, P. B., Low, Y. H., Rainey, P. V., Montgomery, J. H., Bain, M. F., Armstrong, B. M., McNeill, D. W. & Mitchell, N. S., Nov 2010, In : ECS Transactions. 33, 11, p. 37-50 14 p.

      Research output: Contribution to journalArticle

    84. Published

      Germanium on Sapphire Technology

      Gamble, H., Baine, P., Low, Y., Rainey, P., Montgomery, J., Armstrong, M., McNeill, D. & Mitchell, N., Nov 2010, In : ECS Transactions. 33(11), p. 37-50 14 p.

      Research output: Contribution to journalArticle

    85. Published

      Dopant Transport in Tungsten Silicide Buried Layers for Application in SSOI

      Armstrong, M., Baine, P., Montgomery, J., McNeill, D., Gamble, H. & Bain, M., Apr 2010, In : ECS Transactions. 28(1), p. 331-341 11 p.

      Research output: Contribution to journalArticle

    86. Published

      Design, Manufacture and Performance of Germanium Bipolar Transistors

      Armstrong, M., Gamble, H., Armstrong, A. & McNeill, D., Oct 2010, In : ECS Transactions. 33(6), p. 181-189 9 p.

      Research output: Contribution to journalArticle

    87. Published

      High quality thin-film Ge on insulator by Rapid Melt Growth

      Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M., Baine, P., Adley, D. & Perova, T., Jul 2011, p. 1-1. 1 p.

      Research output: Contribution to conferencePaper

    88. Published

      Investigation of crystalline quality and stress in Germanium-On-Insulator layers

      Litvin, A., Adley, D., Perova, T. S., Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M. & Baine, P., Aug 2011, p. 62-62. 1 p.

      Research output: Contribution to conferencePaper

    89. Published

      Investigation of germanium implanted with hydrogen for layer transfer applications

      Perova, T. S., Armstrong, M., Wasyluk, J., Baine, P., Rainey, P., Mitchell, N., McNeill, D., Gamble, H. & Hurley, R., Aug 2011, In : Solid State Phenomena. 178-179, p. 295-300 6 p.

      Research output: Contribution to journalArticle

    90. Published

      Hydrogen and helium implantation in germanium for semiconductor layer transfer applications

      Hurley, R., Rainey, P., Low, Y. W., Baine, P., McNeill, D., Mitchell, N., Gamble, H. & Armstrong, M., Jun 2010, p. 56-56. 1 p.

      Research output: Contribution to conferencePaper

    91. Published

      Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator

      Zainal, N., Mitchell, N., McNeill, D., Bain, M., Armstrong, M., Baine, P., Adley, D. & Perova, T. S., Apr 2012, In : ECS Transactions. 45, p. 169-180 12 p.

      Research output: Contribution to journalArticle

    92. Published

      Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples

      Wasyluk, J., Rainey, P. V., Perova, T. S., Mitchell, N., McNeill, D., Gamble, H., Armstrong, M. & Hurley, R., Mar 2012, In : Journal of Raman Spectroscopy. 43, 3, p. 448-454 7 p.

      Research output: Contribution to journalArticle

    93. Published

      Germanium Processing

      Gamble, H., Armstrong, M., Baine, P., Low, Y. H., Rainey, P. V., Mitchell, N. & McNeill, D., Feb 2011, Semiconductor-On-Insulator Materials for Nanoelectronics Applications. Nazarov, C., Balestra, Raskin, Gamiz & Lysenko (eds.). Springer, p. 3-29 27 p.

      Research output: Chapter in Book/Report/Conference proceedingChapter

    94. Published

      Investigation of crystalline quality and stress in germanium stripes fabricated by rapid melt growth process

      Perova, T. S., Zainal, N., Adley, D., Mitchell, N., McNeill, D., Bain, M., Armstrong, M. & Baine, P., Jul 2012.

      Research output: Contribution to conferencePaper

    95. Published

      Electrical and Optical Characterization of GeON Layers with High-ĸ Gate Stacks on Germanium for Future MOSFETs

      Murad, S., Baine, P., Montgomery, J., McNeill, D., Mitchell, N., Armstrong, M. & Modreanu, M., Apr 2012, In : ECS Transactions. 45, 3, p. 137-144 8 p.

      Research output: Contribution to journalArticle

    96. Published

      Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

      Murad, S., McNeill, D., Mitchell, N., Armstrong, M., Modreanu, M., Hughes, G. & Chellappan, R. K., Dec 2011. 2 p.

      Research output: Contribution to conferencePaper

    97. Published

      Evaluation of the piezoresistance properties of p-type silicon

      Tan, T., McNeill, D., Baine, P., Montgomery, J., Mitchell, N., Wadsworth, H., Strahan, S. & Bailie, I., 09 Sep 2012.

      Research output: Contribution to conferencePoster

    98. Published

      Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

      Murad, S. N. A., Baine, P. T., McNeill, D. W., Mitchell, N., Armstrong, B. M., Modreanu, M., Hughes, G. & Chellappan, R. K., Dec 2012, In : SOLID-STATE ELECTRONICS. 78, p. 136-140 5 p.

      Research output: Contribution to journalArticle

    99. Published

      Long-Range Lateral Dopant Diffusion in Tungsten Silicide Layers

      Liao, S., Bain, M., Baine, P., McNeill, D., Armstrong, M. & Gamble, H., Feb 2009, In : IEEE Transactions on Semiconductor Manufacturing. 22, 1, p. 80-87 8 p., 4773502., 4773502

      Research output: Contribution to journalArticle

    100. Published

      Application of surface plasmon polaritons in the laser ablation and characterisation of thin aluminium films

      Cairns, GF., McNeill, DA. & Dawson, P., 10 Jun 1999, In : Surface Science. 429, 1-3, p. 117-126 10 p.

      Research output: Contribution to journalArticle

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