David McNeill

    David McNeill

    Senior Lecturer

    Phone: +44 (0)28 9097 4534

    For media contact email comms.office@qub.ac.uk
    or call +44(0)2890 973091.

    Scopus Citations 0

    1. Published

      Tungsten Silicide Contacts to Polycrystalline Silicon and Silicon-Germanium Alloys

      Srinivasan, G., Bain, M., Bhattacharya, S., Baine, P., Armstrong, M., Gamble, H. & McNeill, D., Dec 2004, In : Materials Science and Engineering B. 114-115, SPEC. ISS., p. 223-227 5 p.

      Research output: Contribution to journalArticle

    2. Published

      Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes

      Bain, M., Jin, M., Loh, S., Armstrong, M., Gamble, H. & McNeill, D., Feb 2005, In : IEEE Electron Device Letters. 26, 2, p. 72-74 3 p.

      Research output: Contribution to journalArticle

    3. Published

      Comparison of induced stresses due to electroless versus sputtered copper interconnect technology

      McNally, P. J., Kanatharana, J., Toh, B. H. W., McNeill, D., Tuomi, T., Danilewsky, A. N., Knuuttila, L., Riikonen, J. & Toivonen, J., Nov 2004, In : Semiconductor Science and Technology. 19(11), 11, p. 1280-1284 5 p.

      Research output: Contribution to journalArticle

    4. Published

      Silicon-on-insulator substrates with buried tungsten silicide layer

      Gamble, H., Armstrong, M., Baine, P., Bain, M. & McNeill, D., Apr 2001, In : Solid State Electronics. 45(4), 4, p. 551-557 7 p.

      Research output: Contribution to journalArticle

    5. Published

      Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

      McNally, P. J., Kanatharana, J., Toh, B. H. W., McNeill, D., Danilewsky, A. N., Tuomi, T., Knuuttila, L., Riikonen, J., Toivonen, J. & Simon, R., 15 Dec 2004, In : Journal of Applied Physics. 96(12), 12, p. 7596-7602 7 p., 7., 7

      Research output: Contribution to journalArticle

    6. Published

      Investigation of copper layers deposited by CVD using Cu(I)hfac(TMVS) precursor

      Toh, B. H. W., McNeill, D. & Gamble, H., Jul 2005, In : Journal of Materials Science: Materials in Electronics. 16(7), 7, p. 437-443 7 p.

      Research output: Contribution to journalArticle

    7. Published

      Fabrication and characterisation of silicon on insulator substrates incorporating thermal vias

      Bain, M., Baine, P., McNeill, D., Srinivasan, G., Jankovic, N., McCartney, J., Moore, R. A., Armstrong, M. & Gamble, H., Apr 2005, p. 103-108. 6 p.

      Research output: Contribution to conferencePaper

    8. Published

      Manufacture processes for GPSOI substrates and their influence on cross-talk suppression

      Baine, P., Gamble, H., Armstrong, M., McNeill, D., Bain, M., Hamel, J. S. & Kraft, M., Apr 2003, p. 57-63. 7 p.

      Research output: Contribution to conferencePaper

    9. Published

      Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

      Wadsworth, H., Bhattacharya, S., McNeill, D., Ruddell, F., Armstrong, M., Gamble, H. & Denvir, D., Aug 2006, In : Materials Science in Semiconductor Processing. 9, 4-5 SPEC. ISS., p. 685-689 5 p.

      Research output: Contribution to journalArticle

    10. Published

      Germanium on Sapphire By Wafer Bonding

      Baine, P., Gamble, H., Armstrong, M., McNeill, D. & Mitchell, N., Jan 2008.

      Research output: Contribution to conferencePaper

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