David McNeill

    David McNeill

    Senior Lecturer

    Phone: +44 (0)28 9097 4534

    For media contact email comms.office@qub.ac.uk
    or call +44(0)2890 973091.

    Scopus Citations 0

    1. 1998
    2. Published

      Contrasting damage characteristics in direct incidence and surface plasmon mediated single-shot laser ablation of aluminium films

      McNeill, DA., Morrow, T. & Dawson, P., May 1998, In : Applied Surface Science. 127, p. 46-52 7 p.

      Research output: Contribution to journalArticle

    3. Published

      Low temperature epitaxy of Si/Si1-xGex/Si multi-layers by low pressure RTCVD for very thin SOI applications

      McNeill, D., Gay, D. L., Li, X., Armstrong, M. & Gamble, H., Apr 1998, p. 307-313. 7 p.

      Research output: Contribution to conferencePaper

    4. Published

      The effect of germane variation on microstructure in polycrystalline Si/SiGe thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy

      Campbell, P. A., Walmsley, D. G., Chong, R. L. F., Gay, D. L., Gamble, H. & McNeill, D., Mar 1998, In : Applied Physics A - Materials Science & Processing. 66(1-2), p. S1067-S1071 5 p.

      Research output: Contribution to journalArticle

    5. 1997
    6. Published

      BESOI using a silicon germanium etch stop

      Li, X., Gay, D. L., McNeill, D., Armstrong, M. & Gamble, H., Sep 1997, p. 313-320. 8 p.

      Research output: Contribution to conferencePaper

    7. Published

      Single crystal silicon on glass substrates

      Baine, P., Gay, D. L., Quinn, L. J., Lee, B., Mitchell, N., McNeill, D., Armstrong, M. & Gamble, H., Apr 1997, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    8. Published

      Comparison of Si1-yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition

      Ray, S. K., McNeill, D., Gay, D. L., Maiti, C. K., Armstrong, A., Armstrong, M. & Gamble, H., Feb 1997, In : Thin Solid Films. 294(1-2), p. 149-152 4 p.

      Research output: Contribution to journalArticle

    9. 1996
    10. Published

      The effects of deposition conditions on micro-structure in polycrystalline silicon-germanium thin films: fractal characterisation using scanning probe microscopy

      Campbell, P. A., Walmsley, D. G., Gay, D. L., Chong, R. L. F., Gamble, H. & McNeill, D., Dec 1996, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    11. Published
    12. 1993
    13. Published

      Growth of multi-layer Si/Si1-xGex structures using rapid thermal chemical vapour deposition

      McNeill, D., Armstrong, M. & Gamble, H., Dec 1993, p. 187-192. 6 p.

      Research output: Contribution to conferencePaper

    14. 1992
    15. Published
    16. 1991
    17. Published

      Epitaxial silicon growth by rapid thermal CVD

      McNeill, D., Liang, Y., Montgomery, J., Gamble, H. & Armstrong, M., Sep 1991, In : Journal De Physique Iv. 1(C2), p. 779-786 8 p.

      Research output: Contribution to journalArticle

    18. Published

      Rapid thermal epitaxial growth for static induction thyristors

      Ye, L., McNeill, D., Montgomery, J., Raza, S. H., Armstrong, M. & Gamble, H., Sep 1991, p. O-025-O-029. 5 p.

      Research output: Contribution to conferencePaper

    19. Published

      Low temperature epitaxial silicon growth in a rapid thermal processor

      McNeill, D., Gamble, H. & Armstrong, M., May 1991, p. 235-240. 6 p.

      Research output: Contribution to conferencePaper

    20. 1990
    21. Published

      Silicon carbide layers produced by rapid thermal CVD

      Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Oct 1990, p. 159-170. 12 p.

      Research output: Contribution to conferencePaper

    22. Published

      The application of limited reaction processing to the deposition of silicon carbide layers

      Ruddell, F., McNeill, D., Armstrong, M. & Gamble, H., Sep 1990, p. 357-360. 4 p.

      Research output: Contribution to conferencePaper

    23. Published

      Growth of wide band gap polycrystalline semi-insulating polycrystalline silicon

      Sands, D., Brunson, K. M., Spink, D. M., Thomas, C. B., McNeill, D., McDonald, A. A., Jennings, S. & Rosser, P. J., Feb 1990, In : Journal of Vacuum Science & Technology B (microelectronics Processing & Phenomena). 8(1), p. 16-20 5 p.

      Research output: Contribution to journalArticle

    24. 1987
    25. Published

      Rapid thermal processing of polysilicon emitter bipolar transistors in a combined CMOS/bipolar process

      Grant, L. A., McNeill, D. & Blomley, P. F., Sep 1987, p. 207-209. 3 p.

      Research output: Contribution to conferencePaper

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