David McNeill

    David McNeill

    Senior Lecturer

    Phone: +44 (0)28 9097 4534

    For media contact email comms.office@qub.ac.uk
    or call +44(0)2890 973091.

    Scopus Citations 0

    1. 2009
    2. Published

      Optimisation of tungsten disilicide dopant diffusion conduits for SSOI applications

      Liao, S., Bain, M., Baine, P., McNeill, D., Armstrong, M. & Gamble, H., Jan 2009, p. 83-84. 2 p.

      Research output: Contribution to conferencePaper

    3. 2008
    4. Published

      Germanium on sapphire

      Gamble, H., Baine, P., Wadsworth, H., Low, Y., Rainey, P., Ruddell, F., Armstrong, M., McNeill, D. & Mitchell, N., Dec 2008, In : International Journal of High Speed Electronics and Systems. 18, 4, p. 805-814 10 p.

      Research output: Contribution to journalArticle

    5. Published

      Germanium on Sapphire By Wafer Bonding

      Baine, P., Gamble, H., Armstrong, M., McNeill, D., Mitchell, N., Low, Y. & Rainey, P., Dec 2008, In : Solid State Electronics. 52, 12, p. 1840-1844 5 p.

      Research output: Contribution to journalArticle

    6. Published

      Germanium on sapphire substrates for system-on-a-chip

      Gamble, H., Armstrong, M., Baine, P., Low, Y., McNeill, D., Mitchell, N., Montgomery, J. & Ruddell, F., Nov 2008, In : Materials Science in Semiconductor Processing. 11(5), 5, p. 195-198 4 p.

      Research output: Contribution to journalArticle

    7. Published

      Germanium on Sapphire Substrates for System-on-a-Chip

      Armstrong, M., Gamble, H., Mitchell, N., McNeill, D., Ruddell, F., Montgomery, J., Baine, P., Low, Y. & Rainey, P., May 2008, p. 1-1. 1 p.

      Research output: Contribution to conferencePaper

    8. Published

      Conduit diffusion of dopants in tungsten silicide layers

      Armstrong, M., Gamble, H., Bain, M., Baine, P. & McNeill, D., Mar 2008, p. 65-70. 6 p.

      Research output: Contribution to conferencePaper

    9. Published

      Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

      McNeill, D., Bhattacharya, S., Wadsworth, H., Ruddell, F., Mitchell, N., Armstrong, M. & Gamble, H., Feb 2008, In : Journal of Materials Science: Materials in Electronics. 19, 2, p. 119-123 5 p.

      Research output: Contribution to journalArticle

    10. Published

      Germanium on Sapphire By Wafer Bonding

      Baine, P., Gamble, H., Armstrong, M., McNeill, D. & Mitchell, N., Jan 2008.

      Research output: Contribution to conferencePaper

    11. Published

      Germanium bonding to AI2O3

      Baine, P., Gamble, H., Armstrong, M., Mitchell, N., McNeill, D., Rainey, P., Low, Y. & Bain, M., 2008, In : ECS Transactions. 16, 8, p. 407-414 8 p.

      Research output: Contribution to journalArticle

    12. 2007
    13. Published

      Effect of nitridation on Al/HfO2/Ge MIS capacitors

      Kailath, B. J., Bhattacharya, S., DasGupta, A., DasGupta, N., McNeill, D. & Gamble, H., Dec 2007, p. 194-197. 4 p.

      Research output: Contribution to conferencePaper

    14. Published

      Germanium on Sapphire

      Armstrong, M., Baine, P., Gamble, H., McNeill, D., Mitchell, N., Rainey, P., Ruddell, F. & Wadsworth, H., Dec 2007, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    15. Published

      IC SUBSTRATE AND METHOD OF MANUFACTURE

      Armstrong, M., Gamble, H., McNeill, D. & Mitchell, N., Dec 2007, Patent No. Patent Application PCT/GB2007/002281

      Research output: Patent

    16. Published

      Integration of ultrathin SOI using ion split and etch back processes

      Armstrong, M., Baine, P., Gamble, H., McNeill, D. & Suder, S., Jan 2007, p. 19-20. 2 p.

      Research output: Contribution to conferencePaper

    17. 2006
    18. Published

      Low Temperature Bonding of PECVD Silicon Dioxide Layers

      Baine, P., Bain, M., McNeill, D., Gamble, H. & Armstrong, M., Nov 2006, In : ECS Transactions. 3(6), 6, p. 165-173 9 p.

      Research output: Contribution to journalArticle

    19. Published

      Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration

      Armstrong, M., Baine, P., Gamble, H., McNeill, D. & Suder, S., Oct 2006, p. 531-537. 7 p.

      Research output: Contribution to conferencePaper

    20. Published

      Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

      Wadsworth, H., Bhattacharya, S., McNeill, D., Ruddell, F., Armstrong, M., Gamble, H. & Denvir, D., Aug 2006, In : Materials Science in Semiconductor Processing. 9, 4-5 SPEC. ISS., p. 685-689 5 p.

      Research output: Contribution to journalArticle

    21. Published

      Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

      Armstrong, M., Gamble, H., McNeill, D., Ruddell, F. & Wadsworth, H., May 2006, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper

    22. Published

      Buried Dielectrics for GeOI

      Armstrong, M., Ruddell, F., Wadsworth, H., Gamble, H. & McNeill, D., Mar 2006, p. 43-44. 2 p.

      Research output: Contribution to conferencePaper

    23. Published

      Low temperature surface nitridation processes for dielectric-Ge interfaces

      Wadsworth, H. J., Bhattacharya, S., Ruddell, F. H., McNeill, D. W., Mitchell, N., Armstrong, B. M., Gamble, H. S. & Denvir, D., 01 Jan 2006, In : ECS Transactions. 3, 7, p. 531-537 7 p.

      Research output: Contribution to journalArticle

    24. 2005
    25. Published

      Investigation of copper layers deposited by CVD using Cu(I)hfac(TMVS) precursor

      Toh, B. H. W., McNeill, D. & Gamble, H., Jul 2005, In : Journal of Materials Science: Materials in Electronics. 16(7), 7, p. 437-443 7 p.

      Research output: Contribution to journalArticle

    26. Published

      Characterisation of copper inductors fabricated by dual damascene and electroplating techniques

      Toh, B. H. W., McNeill, D. & Gamble, H., Apr 2005, In : Journal of Materials Science: Materials in Electronics. 16(4), 4, p. 233-238 6 p.

      Research output: Contribution to journalArticle

    27. Published

      Fabrication and characterisation of silicon on insulator substrates incorporating thermal vias

      Bain, M., Baine, P., McNeill, D., Srinivasan, G., Jankovic, N., McCartney, J., Moore, R. A., Armstrong, M. & Gamble, H., Apr 2005, p. 103-108. 6 p.

      Research output: Contribution to conferencePaper

    28. Published

      Silicon-on-insulator substrates with buried ground, planes (GPSOI)

      Bain, M., Stefanos, S., Baine, P., Loh, S. H., Jin, L., Montgomery, J., Armstrong, M., Gamble, H., Hamel, J., McNeill, D., Kraft, A. & Kemhadjian, H., Apr 2005, p. 273-278. 6 p.

      Research output: Contribution to conferencePaper

    29. Published

      Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes

      Bain, M., Jin, M., Loh, S., Armstrong, M., Gamble, H. & McNeill, D., Feb 2005, In : IEEE Electron Device Letters. 26, 2, p. 72-74 3 p.

      Research output: Contribution to journalArticle

    30. Published

      Cross-talk suppression in SOI substrates

      Armstrong, M., Bain, M., Baine, P., Gamble, H., McNeill, D. & Montgomery, J., Jan 2005, p. 0-0. 1 p.

      Research output: Contribution to conferencePaper