A Computational Approach for Simulating P-type Silicon Piezoresistor Using Four Point Bending Setup

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    The piezoresistance effect is defined as change in resistance due to applied stress. Silicon has a relatively large piezoresistance effect which has been known since 1954. A four point bending setup is proposed and designed to analyze the piezoresistance effect in p-type silicon. This setup is used to apply uniform and uniaxial stress along the <110> crystal direction. The main aim of this work is to investigate the piezoresistive characteristic of p-type resistors as a function of doping concentrations using COMSOL Multiphysics. Simulation results are compared with experimental data.
    Original languageEnglish
    Number of pages5
    Publication statusPublished - 2013
    EventProceedings of 2013 COMSOL Conference - Rotterdam, Netherlands
    Duration: 23 Oct 201525 Oct 2015


    ConferenceProceedings of 2013 COMSOL Conference

    ID: 17422516