An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

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    Original languageEnglish
    Number of pages5
    Pages (from-to)1045-1049
    JournalSolid State Electronics
    Journal publication dateJun 1999
    Volume43(6)
    Publication statusPublished - Jun 1999

    ID: 724878