Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration

    Research output: Contribution to conferencePaper

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    Original languageEnglish
    Pages531-537
    Number of pages7
    Publication statusPublished - Oct 2006
    Event210th Electrochem Soc Meeting, Symp on SiGe: & Ge Materials, Processing, & Devices - Cancun, Mexico
    Duration: 01 Oct 200601 Oct 2006

    Conference

    Conference210th Electrochem Soc Meeting, Symp on SiGe: & Ge Materials, Processing, & Devices
    CountryMexico
    CityCancun
    Period01/10/200601/10/2006

    ID: 534268