Design, Manufacture and Performance of Germanium Bipolar Transistors

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    Germanium NPN bipolar transistors have been manufactured using phosphorus and boron ion implantation processes. Implantation and subsequent activation processes have been investigated for both dopants. Full activation of phosphorus implants has been achieved with RTA schedules at 535?C without significant junction diffusion. However, boron implant activation was limited and diffusion from a polysilicon source was not practical for base contact formation. Transistors with good output characteristics were achieved with an Early voltage of 55V and common emitter current gain of 30. Both Silvaco process and device simulation tools have been successfully adapted to model the Ge BJT(bipolar junction transistor) performance.

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    Original languageEnglish
    Number of pages9
    Pages (from-to)181-189
    JournalECS Transactions
    Journal publication dateOct 2010
    Volume33(6)
    Publication statusPublished - Oct 2010

    ID: 824749