Electrical Characterisation of SOI Substrates Incorporating WSix Ground Planes

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    Silicon-on-insulator (SOI) substrates incorporating tungsten silicide ground planes (GPs) have been shown to offer the lowest reported crosstalk figure of merit for application in mixed signal integrated circuits. The inclusion of the silicide layer in the structure may lead to stress or defects in the overlying SOI layers and resultant degradation of device performance. It is therefore essential to establish the quality of the silicon on the GPSOI substrate. MOS capacitor structures have been employed in this paper to characterize these GPSOI substrates for the first time. High quality MOS capacitor characteristics have been achieved with minority carrier lifetime of similar to 0.8 ms. These results show that the substrate is suitable for device manufacture with no degradation in the silicon due to stress or metallic contamination resulting from the inclusion of the underlying silicide layer.

    DOI

    Original languageEnglish
    Number of pages3
    Pages (from-to)72-74
    JournalIEEE Electron Device Letters
    Journal publication dateFeb 2005
    Issue number2
    Volume26
    DOIs
    Publication statusPublished - Feb 2005

    ID: 386134