Evaluation of the piezoresistance properties of p-type silicon

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    This paper investigates the characteristics of silicon piezoresistors with various doping concentrations and Length/Width dimensions at micro level. The silicon piezoresistors have been produced by conventional fabrication methods. The measurements are conducted on silicon test chips where p type resistors are fabricated on n type (100) silicon substrates along the <110> direction. A four point bending setup has been designed and fabricated for characterizing the piezoresistor sets. The four point bending setup is used to apply uniform uniaxial stress along the <110> direction. This experimental result demonstrates a good linear relationship between resistance change and stress applied. The effect of doping concentration on temperature sensitivity is also investigated.
    Original languageEnglish
    Publication statusPublished - 09 Sep 2012
    Event23rd Micromechanics and Microsystems Europe - Ilmenau, Germany
    Duration: 09 Sep 2012 → …


    Conference23rd Micromechanics and Microsystems Europe
    Period09/09/2012 → …

    ID: 2155604