High temperature thermal stability studies of ultrathin Al2O3 layers deposited on native oxide and sulphur passivated InGaAs surfaces

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    High resolution synchrotron radiation core level photoemission measurements have been used to undertake a comparative study of the high temperature stability of ultrathin Al2O3 layers deposited by atomic layer deposition (ALD) on both sulphur passivated and native oxide covered InGaAs. The residual interfacial oxides between sulphur passivated InGaAs and the ultrathin Al2O3 layer can be substantially removed at high temperature (up to 700 °C) without impacting on the InGaAs stoichiometry while significant loss of indium was recorded at this temperature on the native oxide InGaAs surface.
    Original languageEnglish
    Number of pages5
    Pages (from-to)249-253
    JournalMicroelectronic Engineering
    Journal publication date01 Nov 2015
    Early online date28 Apr 2015
    Publication statusPublished - 01 Nov 2015

      Research areas

    • Al<inf>2</inf>O<inf>3</inf>, Annealing, Atomic layer deposition, InGaAs, Photoemission, Wet sulphur passivation

    ID: 15830701