Investigation of copper layers deposited by CVD using Cu(I)hfac(TMVS) precursor

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    Original languageEnglish
    Number of pages7
    Pages (from-to)437-443
    JournalJournal of Materials Science: Materials in Electronics
    Journal publication dateJul 2005
    Issue number7
    Volume16(7)
    DOIs
    Publication statusPublished - Jul 2005

    ID: 386923