Large Carrier Mobilities in ErMnO3 Conducting Domain Walls Revealed by Quantitative Hall Effect Measurements

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    Kelvin Probe Force Microscopy (KPFM) has been used to directly and quantitatively measure Hall voltages, developed at conducting tail-to-tail domain walls in ErMnO3 single crystals, when current is driven in the presence of an approximately perpendicular magnetic field. Measurements across a number of walls, using two different atomic force microscope platforms, consistently suggest that the active p-type carriers have unusually large room temperature mobilities: of the order of hundreds of square centimetres per volt second (cm2V-1s-1); associated carrier densities were estimated to be of the order of 1013cm-3. Such mobilities, at room temperature, are high in comparison to both bulk oxide conductors and LaAlO3-SrTiO3 sheet conductors. High carrier mobilities are encouraging for the future of domain-wall nanoelectronics and, significantly, also suggest the feasibility of meaningful investigations into dimensional confinement effects in these novel domain wall systems.
    Original languageEnglish
    Number of pages6
    Pages (from-to)6381-6386
    JournalNano Letters
    Journal publication date2018
    Issue number10
    Early online date12 Sep 2018
    Publication statusPublished - 2018

    ID: 157555377