Low temperature surface nitridation processes for dielectric-Ge interfaces

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    Germanium MOS capacitors have been fabricated with a high-? HfO dielectric using ALD. An in-situ low temperature (250°C) nitrogen plasma treatment on the germanium surface prior to the deposition of HfO was found to be beneficial to the electrical properties of the devices. Germanium MOS capacitors have also been fabricated with a SiO dielectric deposited by an atmospheric pressure CVD 'silox' process. The same low temperature plasma nitridation was found to degrade the electrical properties of the silox devices. The effect of a post-metal anneal in H and N on both types of capacitor structure was also found to degrade device electrical properties. copyright The Electrochemical Society.

    DOI

    Original languageEnglish
    Number of pages7
    Pages (from-to)531-537
    JournalECS Transactions
    Journal publication date01 Jan 2006
    Issue number7
    Volume3
    DOIs
    Publication statusPublished - 01 Jan 2006
    Event210th Electrochemical Society Meeting - Cancun, Mexico
    Duration: 01 Jan 200601 Jan 2006

    ID: 49738538