Measurement of the full stress tensor in a crystal using photoluminescence from point defects: The example of nitrogen vacancy centers in diamond

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    • Fabio Grazioso
    • Brian R. Patton
    • Paul Delaney
    • Matthew L. Markham
    • Daniel J. Twitchen
    • Jason M. Smith

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    We introduce a method for measuring the full stress tensor in a crystal utilising the properties of individual point defects. By measuring the perturbation to the electronic states of three point defects with C 3 v symmetry in a cubic crystal, sufficient information is obtained to construct all six independent components of the symmetric stress tensor. We demonstrate the method using photoluminescence from nitrogen-vacancy colour centers in diamond. The method breaks the inverse relationship between spatial resolution and sensitivity that is inherent to existing bulk strain measurement techniques, and thus, offers a route to nanoscale strain mapping in diamond and other materials in which individual point defects can be interrogated.

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    DOI

    Original languageEnglish
    Article number101905
    Number of pages4
    JournalApplied Physics Letters
    Journal publication date02 Sep 2013
    Issue number10
    Volume103
    DOIs
    StatePublished - 02 Sep 2013

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    ID: 8964942