Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

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    Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate. / Tan, T. H. ; Mitchell, S. J. N.; McNeill, D. W.; Wadsworth, H.; Strahan, S.; Bailie, I.

    International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings. IEEE , 2017. p. 189-193.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Harvard

    Tan, TH, Mitchell, SJN, McNeill, DW, Wadsworth, H, Strahan, S & Bailie, I 2017, Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate. in International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings. IEEE , pp. 189-193, International Conference on Advances in Electrical, Electronic and Systems Engineering ICAEESE, Putrajaya, Malaysia, 14/11/2016. https://doi.org/10.1109/ICAEES.2016.7888036

    APA

    Tan, T. H., Mitchell, S. J. N., McNeill, D. W., Wadsworth, H., Strahan, S., & Bailie, I. (2017). Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate. In International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings (pp. 189-193). IEEE . https://doi.org/10.1109/ICAEES.2016.7888036

    Vancouver

    Tan TH, Mitchell SJN, McNeill DW, Wadsworth H, Strahan S, Bailie I. Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate. In International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings. IEEE . 2017. p. 189-193 https://doi.org/10.1109/ICAEES.2016.7888036

    Author

    Tan, T. H. ; Mitchell, S. J. N. ; McNeill, D. W. ; Wadsworth, H. ; Strahan, S. ; Bailie, I. / Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate. International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings. IEEE , 2017. pp. 189-193

    Bibtex

    @inproceedings{6f97950d624241b899dc6cb5a890645a,
    title = "Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate",
    abstract = "This paper reports on the enhanced piezoresistive effect in p-type <110> silicon nanowires, fabricated using a top down approach. The silicon nanowire width is varied from 100 to 500nm with thickness of 200 nm and length of 9µm. It is found that the piezoresistive effect increases when the nanowire width is reduced below 350 nm. Compared with micrometre sized piezoresistors, silicon nanowires have produced up to 50{\%} enhancement. Silicon nanowire with cross-section of (100 × 200 nm) with doping concentration of 3.2 × 1018 cm-3 has produced a gauge factor of 150. The extracted gauge factors are compared with other silicon nanowire experimental publications. The enhancement in piezoresistive effect by employing non-suspended silicon nanowire is beneficial for new MEMS pressure sensors with medium doping concentrations.",
    author = "Tan, {T. H.} and Mitchell, {S. J. N.} and McNeill, {D. W.} and H. Wadsworth and S. Strahan and I. Bailie",
    year = "2017",
    month = "3",
    day = "30",
    doi = "10.1109/ICAEES.2016.7888036",
    language = "English",
    isbn = "978-1-5090-2890-0",
    pages = "189--193",
    booktitle = "International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings",
    publisher = "IEEE",

    }

    RIS

    TY - GEN

    T1 - Medium Doped Non-Suspended Silicon Nanowire Piezoresistor using SIMOX substrate

    AU - Tan, T. H.

    AU - Mitchell, S. J. N.

    AU - McNeill, D. W.

    AU - Wadsworth, H.

    AU - Strahan, S.

    AU - Bailie, I.

    PY - 2017/3/30

    Y1 - 2017/3/30

    N2 - This paper reports on the enhanced piezoresistive effect in p-type <110> silicon nanowires, fabricated using a top down approach. The silicon nanowire width is varied from 100 to 500nm with thickness of 200 nm and length of 9µm. It is found that the piezoresistive effect increases when the nanowire width is reduced below 350 nm. Compared with micrometre sized piezoresistors, silicon nanowires have produced up to 50% enhancement. Silicon nanowire with cross-section of (100 × 200 nm) with doping concentration of 3.2 × 1018 cm-3 has produced a gauge factor of 150. The extracted gauge factors are compared with other silicon nanowire experimental publications. The enhancement in piezoresistive effect by employing non-suspended silicon nanowire is beneficial for new MEMS pressure sensors with medium doping concentrations.

    AB - This paper reports on the enhanced piezoresistive effect in p-type <110> silicon nanowires, fabricated using a top down approach. The silicon nanowire width is varied from 100 to 500nm with thickness of 200 nm and length of 9µm. It is found that the piezoresistive effect increases when the nanowire width is reduced below 350 nm. Compared with micrometre sized piezoresistors, silicon nanowires have produced up to 50% enhancement. Silicon nanowire with cross-section of (100 × 200 nm) with doping concentration of 3.2 × 1018 cm-3 has produced a gauge factor of 150. The extracted gauge factors are compared with other silicon nanowire experimental publications. The enhancement in piezoresistive effect by employing non-suspended silicon nanowire is beneficial for new MEMS pressure sensors with medium doping concentrations.

    U2 - 10.1109/ICAEES.2016.7888036

    DO - 10.1109/ICAEES.2016.7888036

    M3 - Conference contribution

    SN - 978-1-5090-2890-0

    SP - 189

    EP - 193

    BT - International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES): Proceedings

    PB - IEEE

    ER -

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