Optimisation and scaling of interfacial GeO2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO2

    Research output: Contribution to conferencePaper

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    Original languageEnglish
    Number of pages2
    Publication statusPublished - Dec 2011
    EventIntl Semiconductor Device Research Symp - College Park, United States
    Duration: 07 Dec 201109 Dec 2011

    Conference

    ConferenceIntl Semiconductor Device Research Symp
    CountryUnited States
    CityCollege Park
    Period07/12/201109/12/2011

    ID: 1523571