Physical modelling of millimetre wave signal reflection from forward biased PIN diodes

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    This paper examines the DC power requirements of PIN diodes which, with suitable applied DC bias, have the potential to reflect or to permit transmission of millimetre wave energy through them by the process of inducing a semiconductor plasma layer in the i-region. The study is conducted using device level simulation of SOI and bulk PIN diodes and reflection modelling based on the Drude conduction model. We examined five diode lengths (60–140 µm) and seven diode thicknesses (4–100 µm). Simulation output for the diodes of varying thicknesses was subsequently used in reflection modelling to assess their performance for 100 GHz operation. It is shown that substantially high DC input power is required in order to induce near total reflection in SOI PIN diodes at 100 GHz. Thinner devices consume less DC power, but reflect less incident radiation for given input power. SOI diodes are shown to have improved carrier confinement compared with bulk diodes.
    Original languageEnglish
    Number of pages4
    Pages (from-to)149-152
    JournalSolid State Electronics
    Journal publication dateFeb 2010
    Issue number2
    Volume54
    DOIs
    Publication statusPublished - Feb 2010
    Event5th Workshop of the Thematic-Network-on-Silicon-on-Insulator-Technology-Devices-and-Circuits (EUROSOI 2009) - Chalmers Univ Technol, Gothenburg, Sweden
    Duration: 01 Jan 201001 Jan 2010

    ID: 658166